arf460a/g arf460b/g 125v, 150w, 65mhz the arf460a and arf460b comprise a symmetric pair of common source rf power transistors designed for push-pull scienti ? c, commercial, medical and industrial rf power ampli ? er applications up to 65mhz. they have been optimized for both linear and high ef ? ciency classes of operation. low cost common source rf package. low vth thermal coef? cient. low thermal resistance. optimized soa for superior ruggedness rohs compliant symbol parameter ARF460AG/bg unit v dss drain-source voltage 500 v v dgo drain-gate voltage 500 i d continuous drain current @ t c = 25c 14 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 250 w r jc junction to case 0.50 c/w t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature: 0.063 from case for 10 sec. 300 maximum ratings all ratings: t c =25 c unless otherwise speci? ed static electrical characteristics symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 500 v v ds(on) on state drain voltage 1 (i d(on) = 7a, v gs = 10v) 4 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 0.8v dss , v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v ds = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 25v, i d = 7a) 3.3 5.5 8 mhos v gs(th) gate threshold voltage (v ds = v gs , i d = 50ma) 3 5 volts microsemi website - http://www.microsemi.com 050-5966 rev e 10-2007 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. rf power mosfet n-channel enhancement mode speci? ed 125 volt, 40.68mhz characteristics: output power = 150 watts. gain = 13db (class ab) ef ? ciency = 75% (class c) t o -2 4 7 common source downloaded from: http:///
ARF460AG/bg dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1200 1400 pf c oss output capacitance v ds = 150v 150 180 c rss reverse transfer capacitance f = 1mhz 60 75 t d(on) turn-on delay time v gs = 15v v dd = 0.5v dss i d =i d[cont.] @ 25c r g = 1.6 7 ns t r rise time 6 t d(off) turn-off delay time 20 t f fall time 4.0 7 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli ? er power gain f = 40.68mhz i dq = 50ma v dd = 125v p out = 150w 13 15 db drain ef ? ciency 70 75 % electrical ruggedness vswr 10:1 no degradation in output power 1. pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 050-5966 rev e 10-2007 1 5 10 50 100 500 1612 84 0 2 4 6 8 10 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 50001000 500100 5010 .1 .5 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 5610 51 .5.1 1ms 10ms 100ms dc 100us downloaded from: http:///
ARF460AG/bg 050-5966 rev e 10-2007 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.21.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 2520 15 10 50 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) 6.5v 5.5v 6v 7v v gs =15 & 10v 9v 8v 4.5v 5v z q jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration single pulse 0.5 0.1 0.3 0.7 0.9 0.05 0.600.50 0.40 0.30 0.20 0.10 0 figure 9a, transient thermal impedance model 0.02840.165 0.307 0.00155f0.00934f 0.128f power (watts) junction temp. ( ?c) rc model case temperature table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( )z ol ( ) 2.0 13.5 2740 65 20.9 - j 9.2 2.4 - j 6.8.57 - j 2.6 .31 - j 0.5 .44 - j 1.9 38 - j 2.6 31 - j 14 19.6 - j 17.612.5 - j 15.8 6.0 - j 10.5 z in - gate shunted with 25 i dq = 100ma z ol - conjugate of optimum load for 150 watts output at v dd =125v downloaded from: http:///
ARF460AG/bg 050-5966 rev e 10-2007 to-247 package outline l1 c1 r2 r1 dut l2 l3 c3 c4 c7 c6 c2 c8 c9 l4 125v + - rf output rf input c1 -- 2000 pf 100v npo chip mounted at gate lead c2-c5 -- arco 463 mica trimmer c6-c8 -- .1 f 500v ceramic chip c9 -- 2200 pf 500v chip l1 -- 4t #20 awg .25"id .3 "l ~80nh l2 -- 6t #16 awg .312" id .4"l ~185nh l3 -- 15t #24 awg .25"id ~.85uh l4 -- vk200-4b ferrite choke 3uh r1-r2 -- 51 ohm 0.5w carbon dut = arf460a/b 40.68 mhz test circuit + - bias0 - 12v c5 gate ------- drain source ---- source drain ------- gate device arf- a arf- b source note: these two parts comprise a symmetric pair of rf power transistors and meet the same electrical speci ? cations. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 .1855.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. downloaded from: http:///
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